Download Basic VLSI Design by Douglas A. Pucknell PDF

By Douglas A. Pucknell

Show description

Read Online or Download Basic VLSI Design PDF

Best design books

Toyo Ito: Forces of Nature

The paintings of eastern architect Toyo Ito explores the dynamic courting among structures and their environments. His primary concentration is on constructing an structure freed from the grid approach, which he believes homogenizes humans and their lives. Toyo Ito: strength of Nature files the architect's 2009 Kassler lecture at Princeton collage university of structure.

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits

The 1st ebook to house a extensive spectrum of procedure and machine layout, and modelling concerns with regards to semiconductor units, bridging the distance among gadget modelling and approach layout utilizing TCAD. Examples for sorts of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are in comparison with experimental information from cutting-edge units.

Design Requirements Engineering: A Ten-Year Perspective: Design Requirements Workshop, Cleveland, OH, USA, June 3-6, 2007, Revised and Invited Papers

For the reason that its inception in 1968, software program engineering has passed through a number of alterations. within the early years, software program improvement was once equipped utilizing the waterfall version, the place the focal point of necessities engineering was once on a frozen standards record, which shaped the root of the following layout and implementation strategy.

Electronic portable instruments : design and applications

Content material: Measurements, Instrumentation, and digital transportable tools -- devices and criteria -- forms of tools -- Analog tools -- electronic tools -- layout attention of digital transportable tools -- reaction and flow -- Static reaction -- Dynamic reaction -- error and Uncertainty -- Systematic mistakes -- Calibration mistakes in Sensors -- Random blunders -- Gross error -- mistakes relief recommendations -- Calibration and trying out of tools -- Controlling and Networking of tools -- signs and sign Conditioning -- varieties of signs -- Multichannel and Multidimensional indications -- non-stop or Discrete indications -- Deterministic and Random signs -- temporary signs -- sign category -- Single-Ended and Differential signs -- Narrowband and Broadband indications -- Low- and High-Output Impedance indications -- sign Conditioning on the Sensor point -- Noise and Interference -- Thermal Noise -- Shot Noise -- extra Noise -- Burst Noise -- Partition Noise -- Generation-Recombination Noise -- Spot Noise -- overall Noise -- Noise Bandwidth -- Spectral Density -- Sensors, Transducers, and digital transportable tools -- Voltage and present Sensors -- digital Voltmeters -- strength and gear issue Measurements -- Magnetic Sensors -- fundamental Magnetic Sensors -- Hall-Effect Sensors -- Magnetodiodes and Magnetotransistor Sensors -- Magnetoresistive Sensors -- Magneto-Optical Sensors -- built-in Magnetic box Sensors -- Magnetic skinny movies -- Secondary Magnetic Sensors.

Extra info for Basic VLSI Design

Sample text

A Review of Microelectronics and An Introduction to MOS Technology •• 9. The whole chip then has metal (aluminum) deposited over its surface to a thickness typically of I Jlm. This metal layer is then masked and etched to form the required interconnection pattern. It will be seen that the process revolves around the formation or deposition and patterning of three layers, separated by silicon dioxide insulation. The layers are diffusion within the substrate, polysilicon on oxide on the substrate, and metal insulated again by oxide.

11 Voo RHistor pull-up. •tl ) Basic VLSI Design 2. 12). (a) Dissipation is high ,since rail to rail current flows when V;n = logical 1. d. device. u. device is non-saturated initially and this presents lower resistance through which to charge capacitive loads . ' ~: . No curr nt .... 12 nMOS depletion mode transistor pull-up and transfer characteristic. 3. 13). (a) Dissipation is high since current flows when V;n =logical 1 (VaG is returned to V00) . (b) Vout can never reach VDD (logical I) if VGG = V00 as is normally the case.

The second additional layer-the buried n+ subcollector (BCCD) is added to reduce the n-well (collector) resistance and thus improve the quality of the bipolar transistor. 16. Bipolar transistor characteristics will follow in Chapter 2 and the relevant design rules are dealt with in Chapter 3. 13(t) will serve to further illustrate the actual geometry of a BiCMOS bipolar transistor in n-well technology. 17; which also includes ECL and GaAs gates for cost comparison. 1 BICMOS Fabrication In an n-well Process The basic process steps used are those already outlined for CMOS but with additional process steps and additional masks defining: (i) the p+ base region; (ii) n+ collector area; and (iii) the buried subcollector (BCCD).

Download PDF sample

Rated 4.02 of 5 – based on 26 votes